Structures and methods for a field-reset spin-torque MRAM
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United States of America Patent
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Jul 24, 2012
Grant Date -
Dec 1, 2011
app pub date -
May 28, 2010
filing date -
May 28, 2010
priority date (Note) -
Expired
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Abstract
An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied.
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