Semiconductor device with Cu metal-base and manufacturing method thereof
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United States of America Patent
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Jul 24, 2012
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N/A
app pub date -
Oct 10, 2004
filing date -
Oct 1, 2004
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Expired
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Abstract
As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.
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