Semiconductor device with Cu metal-base and manufacturing method thereof

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United States of America Patent

PATENT NO 8227912
SERIAL NO

11664279

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Abstract

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As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.

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Patent Owner(s)

Patent OwnerAddress
FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE586-9 USHIGAFUCHI AKATSUKA TSUKUBA-CITY IBARAKI PREFECTURE 305-0062

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Morimoto, Akihiro Miyagi, JP 99 956
Ohmi, Tadahiro Miyagi, JP 798 14083

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Patent Citation Ranking

  • 7 Citation Count
  • H01L Class
  • 3.37 % this patent is cited more than
  • 13 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges234326114937383772491639770504017801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +020040060080010001200140016001800200022002400260028003000320034003600

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