Semiconductor device with Al pad
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United States of America Patent
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Jul 17, 2012
Grant Date -
Sep 25, 2008
app pub date -
Mar 24, 2008
filing date -
Mar 23, 2007
priority date (Note) -
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Abstract
A semiconductor device includes: a pad that is formed on a semiconductor layer, contains Al, and has an interconnection portion that is formed outside a bonding area; an interconnection layer that contains Au and is electrically connected to the interconnection portion of the pad, an edge of the interconnection layer being formed outside of the bonding area; and a barrier layer that is provided between the interconnection portion and the interconnection layer.
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