Flash memory device and method for manufacturing the same
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United States of America Patent
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Jul 17, 2012
Grant Date -
Jul 1, 2010
app pub date -
Dec 17, 2009
filing date -
Dec 31, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed are a dual bit type NROM flash memory device and a method for manufacturing the same using a self-aligned scheme. The flash memory device includes a plurality of bit lines buried in a substrate in one direction while being spaced apart from each other at a regular interval; floating gates aligned at both sides of each of the bit lines on the substrate; and a plurality of word lines spaced apart from each other at a regular interval while crossing the bit lines. In the flash memory device of an embodiment, polysilicon is used for a trapping layer, so the programming and erasing operations can be performed at a higher speed, a threshold voltage (Vt) window is widened, and retention characteristics are improved.
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