Semiconductor device having a group-III nitride superlattice layer on a silicon substrate
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United States of America Patent
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Jul 17, 2012
Grant Date -
Jan 12, 2012
app pub date -
Sep 19, 2011
filing date -
Aug 8, 2005
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Abstract
Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α<1, M is a Group V element except nitrogen).
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