Method for fabricating robust light-emitting diodes

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8222063
APP PUB NO 20110049540A1
SERIAL NO

12160044

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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One embodiment of the present invention provides a method for fabricating light-emitting diodes (LEDs). The method includes fabricating an InGaAlN-based multilayer LED structure on a conductive substrate. The method further includes etching grooves of a predetermined pattern through the active region of the multilayer LED structure. The grooves separate a light-emitting region from non-light-emitting regions. In addition, the method includes depositing electrode material on the light-emitting and non-light-emitting regions, thereby creating an electrode. Furthermore, the method includes depositing a passivation layer covering the light-emitting and non-light-emitting regions. Moreover, the method includes removing the passivation layer on the electrode to allow the non-light-emitting regions which are covered with the electrode material and the passivation layer to be higher than the light-emitting region and the electrode, thereby protecting the light-emitting region from contact with test equipment.

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Patent Owner(s)

Patent OwnerAddress
LATTICE POWER (JIANGXI) CORPORATIONNANCHANG JIANGXI 330047

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jiang, Fengyi Jiang Xi, CN 31 547
Wang, Li Nanchang, CN 972 6677

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