GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
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United States of America Patent
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Jul 10, 2012
Grant Date -
Jan 19, 2012
app pub date -
Jul 19, 2010
filing date -
Jul 19, 2010
priority date (Note) -
Expired
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Abstract
A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.
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