High-speed semiconductor device and method for manufacturing the same
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United States of America Patent
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Jul 10, 2012
Grant Date -
Apr 16, 2009
app pub date -
Aug 1, 2006
filing date -
Aug 18, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Disclosed is a semiconductor device wherein the switching speed of a transistor is increased. Specifically disclosed is a semiconductor device comprising a semiconductor layer formed on a part of an insulating layer, a first transistor formed on a lateral face of the semiconductor layer and having a first gate insulating film, a first gate electrode and two first impurity layers forming a source and a drain, and a second transistor formed on another lateral face of the semiconductor layer and having a second gate insulating film, a second gate electrode and two second impurity layers forming a source and a drain.
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