Field effect transistor and electric circuit
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United States of America Patent
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Jul 10, 2012
Grant Date -
Feb 11, 2010
app pub date -
Oct 4, 2007
filing date -
Oct 6, 2006
priority date (Note) -
Expired
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Abstract
The invention relates to a field effect transistor comprising at least one source electrode layer and at least one drain electrode layer arranged in the same plane, a semiconductor layer, an insulator layer and a gate electrode layer, wherein the gate electrode layer, as seen perpendicular to the plane of the at least one source electrode layer and the at least one drain electrode layer, only partly covers a channel arranged between the at least one source electrode layer and the at least one drain electrode layer.
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