Capacitive element fabrication method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 10, 2012
Issued Date -
N/A
app pub date -
Dec 4, 2009
filing date -
Mar 28, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes an operating layer made of a semiconductor and a silicon nitride film formed on the operating layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully