Method for production of silicon wafer for epitaxial substrate and method for production of epitaxial substrate
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United States of America Patent
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Jul 10, 2012
Grant Date -
Apr 15, 2010
app pub date -
Sep 16, 2009
filing date -
Sep 19, 2008
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Abstract
A method for producing a silicon wafer for epitaxial substrate which includes a first step of performing thermal oxidization on a silicon wafer containing boron atoms no less than 1E19 atoms/cm3, thereby forming a silicon oxide film on the surface of the silicon wafer, a second step of peeling off the silicon oxide film, and a third step of performing heat treatment on the silicon wafer in a hydrogen atmosphere.
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