Phase-change memory and fabrication method thereof

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United States of America Patent

PATENT NO 8216877
APP PUB NO 20110177667A1
SERIAL NO

13079840

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Abstract

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A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.

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PROMOS TECHNOLOGIES INC3F NO 19 LI-HSIN ROAD SCIENCE-BASED INDUSTRIAL PARK HSIN CHU CITY

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Inventor Name Address # of filed Patents Total Citations
Chuo, Yen Taipei, TW 18 141
Hsu, Hong-Hui Changhua County, TW 22 204

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