Phase-change memory and fabrication method thereof
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United States of America Patent
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Jul 10, 2012
Grant Date -
Jul 21, 2011
app pub date -
Apr 5, 2011
filing date -
Feb 1, 2007
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Abstract
A phase-change memory is provided. The phase-change memory comprises a substrate. A first electrode is formed on the substrate. A circular or linear phase-change layer is electrically connected to the first electrode. A second electrode formed on the phase-change layer and electrically connected to the phase-change layer, wherein at least one of the first electrode and the second electrode comprises phase-change material.
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