Apparatus for growing high quality silicon single crystal ingot and growing method using the same
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United States of America Patent
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Jul 10, 2012
Grant Date -
Mar 22, 2007
app pub date -
Feb 13, 2006
filing date -
Sep 21, 2005
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Abstract
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
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