Memory device with test mechanism

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United States of America Patent

PATENT NO 8213247
APP PUB NO 20110116332A1
SERIAL NO

12618827

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Abstract

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A semiconductor memory device includes a plurality of memory cell transistors arranged in a matrix and each configured to store data, and a test circuit configured to output to outside the semiconductor memory device an output signal indicative of an amount of test current flowing through a selected one of the plurality of memory cell transistors, wherein the test circuit includes a plurality of reference cell transistors employed to successively produce varying amounts of currents, a comparison circuit configured to successively compare the amount of test current with each of the varying amounts of currents, and a code generating circuit configured to generate a code indicative of a result of the successive comparisons performed by the comparison circuit, wherein the code is output as the output signal.

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Patent Owner(s)

Patent OwnerAddress
NSCORE INCFUKUOKA INSTITUTE OF SYSTEM LSI DESIGN INDUSTRY RM 603 3-8-33 MOMOCHIHAMA SAWARA-KU FUKUOKA 814-0001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Naka, Tomomi Kama, JP 2 7
Sakata, Hajime Fukuoka, JP 48 1469

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