Non-volatile memory device having separate transistors for program and erase operations and reading operation and driving method thereof
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United States of America Patent
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Jul 3, 2012
Grant Date -
Jul 1, 2010
app pub date -
Dec 21, 2009
filing date -
Dec 30, 2008
priority date (Note) -
Expired
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Abstract
A non-volatile memory device and a driving method thereof. The non-volatile memory device includes a floating gate formed on and/or over a first type well, and transistors formed on and/or over a second type well and connected in series to the floating gate. One of the transistors is a first transistor for program and erase operations, and the other one is a second transistor for a reading operation.
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