Arrangement of electrodes for light emitting device
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United States of America Patent
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Jul 3, 2012
Grant Date -
Jan 14, 2010
app pub date -
Sep 13, 2006
filing date -
Sep 15, 2005
priority date (Note) -
Expired
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Abstract
A light emitting diode includes an n-GaN layer on a substrate, an active layer exposing a part of the n-GaN layer, a p-GaN layer on the active layer, a cathode contacting the exposed n-GaN layer and extending from one side of the active layer toward the other side, and an anode formed on the p-GaN layer and including a plurality of sub-electrodes spaced apart from both sides of the cathode and an edge of the active layer at the same distance.
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