Method for fabricating a high-K dielectric layer
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United States of America Patent
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Jul 3, 2012
Grant Date -
Oct 30, 2008
app pub date -
Apr 16, 2008
filing date -
Oct 20, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.
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