Method and apparatus for MOSFET drain-source leakage reduction
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United States of America Patent
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Jun 26, 2012
Grant Date -
Aug 13, 2009
app pub date -
Feb 12, 2009
filing date -
Feb 12, 2008
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Abstract
A method and apparatus is taught for reducing drain-source leakage in MOS circuits. In an exemplary CMOS inverter, a first transistor causes the body of an affected transistor to be at a first body potential. A second transistor brings the body potential of the affected transistor to a second body potential by providing an accurate body voltage from a body voltage source. Exemplary body bias voltage sources are further described that can drive one or more gate transistors of different gate circuits.
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