Thin film field effect transistor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 19, 2012
Grant Date -
Feb 18, 2010
app pub date -
Aug 11, 2009
filing date -
Aug 14, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A thin film field effect transistor has at least a gate electrode 2, a gate insulating layer 3, an active layer 4, a source electrode 5-1 and a drain electrode 5-2 on a substrate 1. The active layer includes an amorphous oxide semiconductor including at least In and Zn, a first interface layer 61 is disposed between the gate insulating layer and the active layer such that it is adjacent to at least the active layer, and a second interface layer is disposed on the opposite side of the active layer with respect to the first interface layer such that it is adjacent to the active layer. A content of Ga or Al in the amorphous oxide semiconductor of each of the first interface layer and the second interface layer is higher than a content of Ga or Al in the amorphous oxide semiconductor of the active layer.
First Claim
Other Claims data not available
