Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
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United States of America Patent
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Jun 19, 2012
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Jun 18, 2009
app pub date -
Dec 17, 2008
filing date -
Dec 17, 2007
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Abstract
In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.
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