Film resistor with a constant temperature coefficient and production of a film resistor of this type
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 12, 2012
Grant Date -
May 5, 2011
app pub date -
Apr 6, 2009
filing date -
Apr 24, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention relates to a film resistor (1) comprising a carbon-containing material (3) into which clusters (4) of conductive cluster material are introduced, wherein the conductive cluster material has a positive temperature coefficient. The clusters (4) are surrounded by a graphite casing and embedded in the carbon-containing material (3). Furthermore, the cluster material is present in a thermodynamically stable phase. The invention also relates to a method for producing a film resistor (1), wherein a PVD process is carried out on a carrier substrate (11) using a sputtering material under a reactive atmosphere of a carbon-containing gas, and therefore the carbon-containing gas is dissociated and a carbon-containing layer (3) is deposited on the carrier substrate (11), with clusters (4) of the sputtering material being embedded in said carbon-containing layer, wherein the carbon-containing layer (3) is heated to a predetermined temperature while the PVD process is carried out, with the sputtering material or a compound of the sputtering material forming in a stable phase at said temperature.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully