Plasma processing method and plasma processing apparatus
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United States of America Patent
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Jun 12, 2012
Grant Date -
May 28, 2009
app pub date -
Sep 26, 2005
filing date -
Sep 26, 2005
priority date (Note) -
Expired
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Abstract
A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.
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