Interlayer insulating film, interconnection structure, and methods of manufacturing the same
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United States of America Patent
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Jun 5, 2012
Grant Date -
Apr 30, 2009
app pub date -
Jun 20, 2006
filing date -
Jun 20, 2005
priority date (Note) -
Expired
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Abstract
This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF4 and is stable, and a wiring structure comprising the same. In an interlayer insulating film comprising an insulating film provided on a substrate layer, the interlayer insulating film has an effective permittivity of not more than 3. The wiring structure comprises an interlayer insulating film, a contact hole provided in the interlayer insulating film, and a metal filled into the contact hole. The insulating film comprises a first fluorocarbon film provided on the substrate layer and a second fluorocarbon film provided on the first fluorocarbon film.
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