Method for forming a sintered semiconductor material
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United States of America Patent
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Jun 5, 2012
Grant Date -
Feb 12, 2009
app pub date -
Aug 1, 2008
filing date -
Apr 14, 2003
priority date (Note) -
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Abstract
A method of forming a material from a source material including the following steps of grinding the source material to get powders if the source material is not already in the form of powders; sintering the powders with at least one compression step and one thermal processing step; and purifying the material with a gas flow, the gas flow passing through the porosity channels of the material.
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