GaN-based laser diodes with misfit dislocations displaced from the active region
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United States of America Patent
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May 29, 2012
Grant Date -
Dec 1, 2011
app pub date -
May 28, 2010
filing date -
May 28, 2010
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Expired
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Abstract
A GaN-based edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate is characterized by a threading dislocation density on the order of approximately 1×106/cm2. The strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value. In addition, the cumulative strain-thickness product of the active region calculated for the growth on a the relaxed N-side waveguiding layer is less than its strain relaxation critical value. As a result, the N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations and the P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations. Additional embodiments are disclosed and claimed.
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