Memory device including an electrode having an outer portion with greater resistivity
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United States of America Patent
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May 29, 2012
Grant Date -
Oct 21, 2010
app pub date -
Jun 29, 2010
filing date -
Feb 28, 2008
priority date (Note) -
Expired
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Abstract
A memory cell includes a first electrode having a first region and a second region, a second electrode and a phase change material. The phase change material is interposed between the first electrode and the second electrode with the first region of the first electrode arranged closer to the phase change material than the second region. The first region of the first electrode includes an inner portion laterally surrounded by an outer portion. The outer portion has a greater resistivity than the inner portion. The second region of the first electrode has the same resistivity as the inner portion of the first region.
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