Field effect transistor and method for fabricating the same
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United States of America Patent
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May 29, 2012
Grant Date -
Sep 8, 2011
app pub date -
May 10, 2011
filing date -
Feb 7, 2007
priority date (Note) -
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Abstract
A method for fabricating a field effect transistor includes: forming an insulating film provided on a semiconductor layer, the insulating film having an opening via which a surface of the semiconductor layer is exposed and including silicon oxide; forming a Schottky electrode on the insulating film and in the opening, the Schottky electrode having an overhang portion and having a first contact layer that is provided in a region contacting the insulating film and contains oxygen, and a second contact layer that is provided on the first contact layer and contains a smaller content of oxygen than that of the first contact layer; and removing the insulating film by a solution including hydrofluoric acid.
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