Thin film field effect transistor and display
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United States of America Patent
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May 29, 2012
Grant Date -
Sep 24, 2009
app pub date -
Mar 4, 2009
filing date -
Mar 24, 2008
priority date (Note) -
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Abstract
A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode and a drain electrode, wherein a resistance layer containing an amorphous oxide and having a thickness of more than 3 nm is disposed between the active layer and at least one of the source electrode or the drain electrode, and a band gap of the active layer is smaller than a band gap of the resistance layer. Also, a display using the TFT is provided.
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