Field-effect transistor (FET) with embedded diode
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United States of America Patent
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May 22, 2012
Grant Date -
Dec 4, 2008
app pub date -
May 28, 2008
filing date -
May 29, 2007
priority date (Note) -
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Abstract
A Field-Effect Transistor (FET) is provided that includes a first portion and a second portion separated from the first portion by a gap. The FET further includes at least one diode embedded within the gap between the first and second portions. A plurality of FETs also may be provided with adjacent FETs electrically isolated.
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