Stacked trench metal-oxide-semiconductor field effect transistor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 22, 2012
Issued Date -
N/A
app pub date -
Mar 18, 2008
filing date -
May 13, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully