Method for preferential growth of semiconducting vertically aligned single walled carbon nanotubes
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United States of America Patent
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May 22, 2012
Grant Date -
Feb 3, 2011
app pub date -
Jul 29, 2009
filing date -
Jul 29, 2008
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Expired
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Abstract
A method and system for the preferential growth of semiconducting vertically-aligned single-walled carbon nanotubes (VA-SWNTs) is provided. The method combines the use of plasma-enhanced chemical vapor deposition at low pressure with rapid heating. The method provides a high yield of up to approximately 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating field effect transistor (FET) devices without the need for any post-synthesis purification or separation.
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