Method for manufacturing a semiconductor device and semiconductor device obtainable with such a method

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8183160
APP PUB NO 20100225003A1
SERIAL NO

12681119

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for manufacturing a semiconductor device includes providing a patterned hard-mask layer. The hard-mask layer is provided on an exposed surface of one or more layers to be patterned of a semiconductor intermediate product. The hard-mask layer covers the exposed surface in covered areas of the one or more layers to be patterned and does not cover the exposed surface in bared areas of the one or more layers to be patterned. One or more recesses are formed in the layers to be patterned by at least partially removing the layers to be patterned in the bared areas. The hard-mask layer is ten removed. After removing the hard-mask layer the recess is filled with a filling material.

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Patent Owner(s)

  • NXP USA, INC.;STMICROELECTRONICS (CROLLES2) SAS;STMICROELECTRONICS (CROLLES 2) SAS

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Broussous, Lucile Goncelin, FR 4 68
Fox, Robert Singapore, SG 72 872
Lagha, Anissa Montbonnot, FR 1 5
Levy, Didier Saint Nazaire les Eymes, FR 3 18

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