Diamond GaN devices and associated methods
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United States of America Patent
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May 22, 2012
Grant Date -
Dec 16, 2010
app pub date -
May 5, 2010
filing date -
Jun 16, 2009
priority date (Note) -
Expired
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Abstract
Semiconductor devices and methods of making thereof are provided. In one aspect, for example, a method for making a semiconductor device can include polishing a working surface of a diamond layer to a substantially flat surface, depositing a buffer layer on the working surface of the diamond layer, and depositing a semiconductor layer on the buffer layer. In one specific aspect, the c-axis of the buffer layer is oriented perpendicular to the working surface of the diamond layer.
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