Memory fault injection

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United States of America Patent

PATENT NO 8181100
SERIAL NO

12359159

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Abstract

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Techniques, apparatus, and systems for injecting a memory fault can include obtaining first data and second data different from the first data, generating first error detection information based on the first data, writing the second data to a memory unit using a specified address, and using the first error detection information as error detection information for the second data to create a memory fault condition.

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Patent Owner(s)

Patent OwnerAddress
MARVELL ASIA PTE LTDTAI SENG CENTRE 3 IRVING ROAD #10-01 SINGAPORE 369522

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Byers, Larry L Apple Valley, US 60 1630
Koehmstedt, Thomas F Shakopee, US 1 14
Purdham, David M Eden Prairie, US 15 233

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