Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage
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United States of America Patent
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May 15, 2012
Grant Date -
Feb 11, 2010
app pub date -
Jan 31, 2008
filing date -
Jan 31, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.
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| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| JP | B2 | JP5411422 | Nov 27, 2007 |
| EP | A1 | EP2110857 | Jan 31, 2008 |
| WO | A1 | WO2008093789 | Jan 31, 2008 |
International Classification(s)
- 2008 Application Filing Year
- H01L Class
- 14823 Applications Filed
- 10962 Patents Issued To-Date
- 73.96 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 3.37 % this patent is cited more than
- 13 Age
