Schottky barrier diode and method for using the same
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United States of America Patent
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May 15, 2012
Grant Date -
Oct 1, 2009
app pub date -
Nov 22, 2006
filing date -
Nov 25, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film.
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