Semiconductor device having GaN-based semiconductor layer and select composition ratio insulating film
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United States of America Patent
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May 15, 2012
Grant Date -
Oct 5, 2006
app pub date -
Mar 30, 2006
filing date -
Mar 30, 2005
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Abstract
A semiconductor device includes a GaN-based semiconductor layer formed on a substrate, and an insulating film composed of any one of silicon nitride in which the composition ratio of silicon to nitrogen is 0.85 to 3.0, silicon oxide in which the composition ratio of silicon to oxygen is 0.6 to 3.0, or silicon oxide nitride in which the composition ratio of silicon to nitrogen and oxygen is 0.6 to 3.0 that is formed on a surface of the GaN-based semiconductor layer, a gate electrode formed on the GaN-based semiconductor layer, and a source electrode and a drain electrode formed with the gate electrode therebetween.
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