Field effect transistor
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United States of America Patent
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May 15, 2012
Issued Date -
N/A
app pub date -
Nov 10, 2005
filing date -
Nov 11, 2004
priority date (Note) -
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Abstract
A field effect transistor including a gate insulation portion, an organic semiconductor portion, a source electrode and a drain electrode, wherein when a voltage is applied to the gate at 70° C. for 5.0±0.1 hours so that the field strength in the gate insulation portion would be 100±5 MV/m, the change in the threshold voltage is within 5 V. The organic semiconductor portion has a high driving stability, of which the change in characteristics by driving is thereby small.
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