Wiring structure and method for fabricating the same
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United States of America Patent
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May 8, 2012
Grant Date -
Apr 22, 2010
app pub date -
Feb 2, 2009
filing date -
Oct 17, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a nickel, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a nickel in the diffusion barrier layer is enriched compared with the backing layer.
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