Method and device for producing semiconductor wafers of silicon
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United States of America Patent
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May 8, 2012
Grant Date -
Jun 26, 2008
app pub date -
Dec 19, 2007
filing date -
Dec 20, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.
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