Semiconductor-on-diamond devices and methods of forming

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United States of America Patent

PATENT NO 8168969
SERIAL NO

12983801

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Abstract

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The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold.

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Patent Owner(s)

Patent OwnerAddress
RITEDIA CORPORATIONNO 17 KUANG-FU N RD HSIN CHU INDUSTRIAL PARK 30351

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sung, Chien-Min Tansui, TW 268 5322

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