Realization of self-positioned contacts by epitaxy
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United States of America Patent
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May 1, 2012
Grant Date -
Oct 16, 2008
app pub date -
Apr 11, 2008
filing date -
Apr 13, 2007
priority date (Note) -
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Abstract
Metal contacts are self-positioned on a wafer of semiconductor product. Respective placement areas for a metal contact are determined by a selective deposition of a growth material over a region of the substrate surface (for example, through epitaxial growth). The growth material is surrounded by an insulating material. The grown material is then removed to form a void in the insulating material which coincides with the desired location of the metal contact. This removal of the grown material exposes the region on the substrate surface. Conductive material is then deposited to fill the void and thus form the metal contact directly with the region of the substrate surface.
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