Semiconductor laser and method for manufacturing the same
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United States of America Patent
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Apr 17, 2012
Grant Date -
Aug 5, 2010
app pub date -
Jun 9, 2008
filing date -
Jul 17, 2007
priority date (Note) -
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Abstract
The present invention provides a semiconductor laser including a first conductive type of a lower clad layer 12, an active layer 14 provided on the lower clad layer 12, the active layer 14 including a plurality of quantum dots, and a second conductive type of an upper clad layer 18, the upper clad layer 18 being provided on the active layer 14 so as to have an isolated ridge portion 30 such that W1≦Wtop+0.4 μm where Wtop is the width of a top of the ridge portion 30 and W1 is the width of the ridge portion 30 at a height of 50 nm from a bottom of the ridge portion 30. The present invention also provides a method for manufacturing such a semiconductor laser.
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