Methods of forming graphene/(multilayer) boron nitride for electronic device applications
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United States of America Patent
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Apr 17, 2012
Grant Date -
Feb 24, 2011
app pub date -
Aug 18, 2009
filing date -
Aug 18, 2009
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Expired
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Abstract
Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by repeated atomic layer deposition (ALD) of a boron-halide or organoborane precursor and NH3 onto a substrate followed by a high temperature anneal. Graphene can then be formed on an ordered BN(111) film by depositing carbon on the ordered surface of the BN(111) film.
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