Substrate surface modifications for compositional gradation of crystalline materials and associated products

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United States of America Patent

PATENT NO 8157914
SERIAL NO

11809718

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Abstract

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A compositionally graded material having low defect densities and improved electronic properties is disclosed and described. A compositionally graded inorganic crystalline material can be formed by preparing a crystalline substrate by forming crystallographically oriented pits across an exposed surface of the substrate. A transition region can be deposited on the substrate under substantially epitaxial growth conditions. Single crystal substrates of a wide variety of materials such as diamond, aluminum nitride, silicon carbide, etc. can be formed having relatively low defect rates.

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Patent Owner(s)

Patent OwnerAddress
RITEDIA CORPORATIONNO 17 KUANG-FU N RD HSIN CHU INDUSTRIAL PARK 30351

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sung, Chien-Min Taipei County, TW 268 5322

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