Ion implantation ion source, system and method
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United States of America Patent
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Apr 10, 2012
Grant Date -
Jun 17, 2010
app pub date -
Dec 18, 2009
filing date -
Dec 13, 1999
priority date (Note) -
Expired
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Abstract
An ion source is disclosed incorporating various aspects of the invention including i) a vaporizer, ii) a vaporizer valve, iii) a gas feed, iv) an ionization chamber, v) an electron gun, vi) a cooled mounting frame, and vii) an ion exit aperture. The ion source includes means for introducing gaseous feed material into the ionization chamber, means for vaporizing solid feed materials and introducing their vapors into the ionization chamber, means for ionizing the introduced gaseous feed materials within the ionization chamber, and means for extracting the ions thus produced from an ion exit aperture adjacent to the ionization region. In addition, means for accelerating and focusing the exiting ions are provided. The vaporizer, vaporizer valve, gas feed, ionization chamber, electron gun, cooled mounting frame, and ion exit aperture are all integrated into a single assembly in preferred embodiments of the novel ion source.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
| Patent Owner | Address | |
|---|---|---|
| SEMEQUIP INC | 34 SULLIVAN ROAD UNIT #21 BILLERICA MA 01862 |
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Inventor(s)
| Inventor Name | Address | # of filed Patents | Total Citations |
|---|---|---|---|
| Horsky, Thomas Neil | Boxborough, US | 13 | 667 |
| Williams, John Noel | Boston, US | 9 | 582 |
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| Fee | Large entity fee | small entity fee | micro entity fee |
|---|---|---|---|
| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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