Diamondoid monolayers as electron emitters
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United States of America Patent
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Apr 10, 2012
Grant Date -
Aug 14, 2008
app pub date -
Feb 12, 2007
filing date -
Feb 12, 2007
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Abstract
Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
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