Integrated electronic circuit including a thin film portion based on hafnium oxide
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United States of America Patent
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Apr 10, 2012
Grant Date -
Mar 11, 2010
app pub date -
Apr 25, 2008
filing date -
Apr 27, 2007
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Abstract
An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.
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